Evan M Anderson

collaborators

2 papers

physics.app-ph2026

Comparison of time-resolved photoluminescence and deep-level transient spectroscopy defect evaluations in an InAs nBn detector subjected to in-situ and ex-situ 63 MeV proton irradiation

Rigo A. Carrasco, Christopher P. Hains, Nathan Gajowski +9

Deep-level transient spectroscopy and temperature-dependent time-resolved photoluminescence experiments are performed on identical InAs nBn photodetector structures as a function o…

physics.app-ph2025

Optical characterization of deep level defects in n-type Al $_{x}$ In $_{y}$ Ga $_{1 - x - y}$ P for development of solid-state photomultiplier analogs

Andrew M. Armstrong, Evan M. Anderson, Lisa N. Caravello +6

Characterizing intrinsic defects is an important step in evaluating materials for new optoelectronic device applications. For photomultipliers, suppressing dark currents is critica…

Comparison of time-resolved photoluminescence and deep-level transient spectroscopy defect evaluations in an InAs nBn detector subjected to in-situ and ex-situ 63 MeV proton irradiation

Optical characterization of deep level defects in n-type Alx​Iny​Ga1−x−y​P for development of solid-state photomultiplier analogs

Optical characterization of deep level defects in n-type Al $_{x}$ In $_{y}$ Ga $_{1 - x - y}$ P for development of solid-state photomultiplier analogs