3 papers
physics.app-ph2026
Comparison of time-resolved photoluminescence and deep-level transient spectroscopy defect evaluations in an InAs nBn detector subjected to in-situ and ex-situ 63 MeV proton irradiation
Rigo A. Carrasco, Christopher P. Hains, Nathan Gajowski +9
Deep-level transient spectroscopy and temperature-dependent time-resolved photoluminescence experiments are performed on identical InAs nBn photodetector structures as a function o…
physics.optics2025
Midinfrared Semiconductor Photonics - A Roadmap
J. R. Meyer, I. Vurgaftman, S. -Q. Yu +56
Semiconductor photonic devices operating in the midwave infrared (mid-IR, which we roughly define here as wavelengths spanning 3 to 14 microns) uniquely address a wide range of cur…
physics.optics2024
Comparative Study of InGaAs and GaAsSb Nanowires for Room Temperature Operation of Avalanche Photodiodes at 1.55 μm
Shrivatch Sankar, Punam Murkute, Micah Meleski +6
III V semiconductor nanowire based photodetectors have significant potential for remote sensing and LiDAR applications, particularly due to their ability to operate at 1.55 μm. Ac…