4 papers
Sub-nm2 ferroelectric domains via charged 180 degree walls in ZrO2
Nashrah Afroze, Hamoon Fahrvandi, Guodong Ren +31
Flat phonon bands in fluorite ferroelectrics (HfO2 or ZrO2) shrink polar domains laterally to an irreducible half-unit-cell width (0.27 nm) within which the vertical arrangement of…
The First Switch Effect in Ferroelectric Field-Effect Transistors
Priyankka Ravikumar, Prasanna Venkatesan, Chinsung Park +7
In this work, a ferroelectric field-effect transistor (FEFET) is systematically characterized and compared with an equivalent standard MOSFET with an equivalent oxide thickness. We…
Row Hammer Effect and Floating Body Effect of Monolithic 3D Stackable 1T1C DRAM
Sungwon Cho, Po-Kai Hsu, Kiseok Lee +3
Monolithic 3D stackable 1T1C DRAM technology is on the rise, with initial prototypes reported by the industry. This work presents a comprehensive reliability study focusing on the…
FeNOMS: Enhancing Open Modification Spectral Library Search with In-Storage Processing on Ferroelectric NAND (FeNAND) Flash
Sumukh Pinge, Ashkan Moradifirouzabadi, Keming Fan +29
The rapid expansion of mass spectrometry (MS) data, now exceeding hundreds of terabytes, poses significant challenges for efficient, large-scale library search - a critical compone…