4 papers
Crystallinity Evolution of MOCVD-Grown -GaO Films Probed by In Situ HT-XRD under Different Reactor Heights
Imteaz Rahaman, Botong Li, Bobby G. Duersch +3
The crystallinity of -GaO thin films grown by metal-organic chemical vapor deposition (MOCVD) is strongly influenced by reactor design and the resulting growth environm…
In situ XRD Study of Strain Evolution in AlGaN/GaN HEMT at High Temperatures up to 1000 °C
Botong Li, Bobby G. Duersch, Hunter Ellis +6
The thermal stability and structural evolution of a GaN high-electron-mobility transistor (HEMT) heterostructure grown on a Si (111) substrate were investigated using in situ high-…
Phase Competition and Rutile Phase Stabilization of Growing GeO2 Films by MOCVD
Imteaz Rahaman, Botong Li, Hunter D. Ellis +4
Rutile germanium dioxide (r-GeO2) is an ultra-wide bandgap semiconductor with potential for ambipolar doping, making it a promising candidate for next-generation power electronics…
Phase Evolution and Substrate-Dependent Nucleation of Quartz GeO Films Grown by MOCVD on r- and c-Plane Sapphires
Botong Li, Imteaz Rahaman, Hunter Ellis +3
Ultrawide-bandgap (UWBG) semiconductors, such as GeO, are gaining significant attention for their potential in high-performance applications, particularly in piezoelectric devi…