Bobby G. Duersch

collaborators

7 papers

cond-mat.mtrl-sci2026

Thermal Stability and Phase Transformation of Conductive $I^\pm$ - $(Al_{x} Ga_{1 - x})_{2} O_{3} / Ga_{2} O_{3}$ Heterostructures on Sapphire Substrates

Botong Li, Shisong Luo, Jaeheon Jung +10

Thermal stability and phase transformation of conductive $I^\pm$ - $(Al_{0.16} Ga_{0.84})_{2} O_{3} / Ga_{2} O_{3}$ heterostructures on sapphire…

cond-mat.mtrl-sci2026

Crystallinity Evolution of MOCVD-Grown $I^^{2}$ -Ga $_{2}$ O $_{3}$ Films Probed by In Situ HT-XRD under Different Reactor Heights

Imteaz Rahaman, Botong Li, Bobby G. Duersch +3

The crystallinity of $I^^{2}$ -Ga $_{2}$ O $_{3}$ thin films grown by metal-organic chemical vapor deposition (MOCVD) is strongly influenced by reactor design and the resulting growth environm…

cond-mat.mtrl-sci2025

In situ XRD Study of Strain Evolution in AlGaN/GaN HEMT at High Temperatures up to 1000 Â°C

Botong Li, Bobby G. Duersch, Hunter Ellis +6

The thermal stability and structural evolution of a GaN high-electron-mobility transistor (HEMT) heterostructure grown on a Si (111) substrate were investigated using in situ high-…

cond-mat.mtrl-sci2025

In situ Study of p-NiO Film Quality at High Temperatures up to 1100 deg C

Hunter Ellis, Bobby G. Duersch, Botong Li +4

NiO is a promising p-type material for photovoltaics and power electronics, but its temperature limits remain unclear. Using in situ high-temperature X-ray diffraction (HT-XRD) fro…

cond-mat.mtrl-sci2025

High thermal conductivity of rutile-GeO $_{2}$ films grown by MOCVD: $52.9 W m^{- 1} K^{- 1}$

Imteaz Rahaman, Michael E. Liao, Ziqi Wang +10

Rutile germanium dioxide (r-GeO2) has recently emerged as a promising ultrawide-bandgap (UWBG) semiconductor owing to its wide bandgap (~4.4-5.1 eV), ambipolar doping potential, an…

cond-mat.mtrl-sci2025

Phase Evolution and Substrate-Dependent Nucleation of Quartz GeO $_{2}$ Films Grown by MOCVD on r- and c-Plane Sapphires

Botong Li, Imteaz Rahaman, Hunter Ellis +3

Ultrawide-bandgap (UWBG) semiconductors, such as GeO $_{2}$ , are gaining significant attention for their potential in high-performance applications, particularly in piezoelectric devi…

Thermal Stability and Phase Transformation of Conductive I^±-(Alx​Ga1−x​)2​O3​/Ga2​O3​ Heterostructures on Sapphire Substrates

Crystallinity Evolution of MOCVD-Grown I^2-Ga2​O3​ Films Probed by In Situ HT-XRD under Different Reactor Heights

In situ XRD Study of Strain Evolution in AlGaN/GaN HEMT at High Temperatures up to 1000 Â°C

In situ Study of p-NiO Film Quality at High Temperatures up to 1100 deg C

High thermal conductivity of rutile-GeO2​ films grown by MOCVD: 52.9 Wm−1K−1

Phase Evolution and Substrate-Dependent Nucleation of Quartz GeO2​ Films Grown by MOCVD on r- and c-Plane Sapphires

Thermal Stability and Phase Transformation of Conductive $I^\pm$ - $(Al_{x} Ga_{1 - x})_{2} O_{3} / Ga_{2} O_{3}$ Heterostructures on Sapphire Substrates

Crystallinity Evolution of MOCVD-Grown $I^^{2}$ -Ga $_{2}$ O $_{3}$ Films Probed by In Situ HT-XRD under Different Reactor Heights

High thermal conductivity of rutile-GeO $_{2}$ films grown by MOCVD: $52.9 W m^{- 1} K^{- 1}$

Phase Evolution and Substrate-Dependent Nucleation of Quartz GeO $_{2}$ Films Grown by MOCVD on r- and c-Plane Sapphires