Carbon-Nanotube/${\hat{I}}^2$-Ga${}_2$O${}_3$ Heterojunction PIN Diodes

Hunter D. Ellis, Botong Li, Haoyu Xie +4

${\hat{I}}^2$-Ga${}_2$O${}_3$ is gaining attention as a promising semiconductor for next-generation high-power, high-efficiency, and high-temperature electronic devices, thanks to its exception…