10 citations · 16 across the 2 of their papers we have counts for
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cond-mat.mtrl-sci2014★ 6 cited
The role of stoichiometric vacancy periodicity in pressure-induced amorphization of the Ga2SeTe2 semiconductor alloy
Najeb Abdul-Jabbar, Bora Kalkan, Alastair MacDowell +3
We observe that pressure-induced amorphization of Ga2SeTe2 (a III-VI semiconductor) is directly influenced by the periodicity of its intrinsic defect structures. Specimens with per…
cond-mat.mtrl-sci2011★ 10 cited
Single Crystal Growth of Ga2(SexTe1-x)3 Semiconductors and Defect Studies via Positron Annihilation Spectroscopy
N. M. Abdul-Jabbar, E. D. Bourret-Courchesne, B. D. Wirth
Small single crystals of Ga2(SexTe1-x)3 semiconductors, for x = 0.1, 0.2, 0.3, were obtained via modified Bridgman growth techniques. High-resolution powder x-ray diffractometry co…