activity
20052018
most citedFemtosecond control of electric currents at the interfaces of metallic ferromagnetic heterostructures

268 citations · 350 across the 10 of their papers we have counts for

collaborators

10 papers

physics.app-ph2018

An Electromagnet-Based Magnetically-Activated Thermal Switch Without Moving Parts

C. Rodrigues, M. M. Dias, L. Martins +4

With the ever increasing power dissipation in electrical devices, new thermal management solutions are in high demand to maintain an optimal operating temperature and efficient per…

cond-mat.mes-hall2018★ 7 cited

Influence of Thickness and Contact Area on the Performance of PDMS-Based Triboelectric Nanogenerators

A. Gomes, C. Rodrigues, A. M. Pereira +1

Triboelectric nanogenerators (TENGs) are an emerging mechanical energy harvesting technology that was recently demonstrated. Due to their flexibility, they can be fabricated in var…

cond-mat.mes-hall2015★ 268 cited

Femtosecond control of electric currents at the interfaces of metallic ferromagnetic heterostructures

T. J. Huisman, R. V. Mikhaylovskiy, J. D. Costa +8

The idea to utilize not only the charge but also the spin of electrons in the operation of electronic devices has led to the development of spintronics, causing a revolution in how…

cond-mat.mtrl-sci2007★ 1 cited

Quantum effects in atomically perfect specular spin valve structures

J. M. Teixeira, J. Ventura, Yu. G. Pogorelov +1

A simple tight-binding theoretical model is proposed for spin dependent, current-in-plane transport in highly coherent spin valve structures under specularity conditions. Using qua…

cond-mat.mtrl-sci2006★ 10 cited

Dielectric breakdown in underoxidized magnetic tunnel junctions: Dependence on oxidation time and area

J. Ventura, R. Ferreira, J. B. Sousa +1

Magnetic tunnel junctions (MTJs) with partially oxidized 9 ÅAlO-barriers were recently shown to have the necessary characteristics to be used as magnetoresistive sensors in hig…

cond-mat.mtrl-sci2006★ 10 cited

Nanoscopic processes of Current Induced Switching in thin tunnel junctions

J. Ventura, J. P. Araujo, J. B. Sousa +3

In magnetic nanostructures one usually uses a magnetic field to commute between two resistance (R) states. A less common but technologically more interesting alternative to achieve…