20 citations · 38 across the 2 of their papers we have counts for
2 papers
cond-mat.mes-hall2016★ 18 cited
Oxygen modulated quantum conductance for ultra-thin HfO-based memristive switching devices
Xiaoliang Zhong, Ivan Rungger, Peter Zapol +1
Memristive switching devices, candidates for resistive random access memory technology, have been shown to switch off through a progression of states with quantized conductance and…
cond-mat.mtrl-sci2014★ 20 cited
Electronic and magnetic properties of Ti4O7 predicted by self-interaction corrected density functional theory
Xiaoliang Zhong, Ivan Rungger, Peter Zapol +1
Understanding electronic properties of sub-stoichiometric phases of titanium oxide such as Magnéli phase Ti4O7 is crucial in designing and modeling resistive switching devices. Her…