12 citations · 17 across the 6 of their papers we have counts for
6 papers
Magnetic anisotropy driven by ligand in 4d transition metal oxide SrRuO3
Yuki K. Wakabayashi, Masaki Kobayashi, Yuichi Seki +7
The origin of magnetic anisotropy in magnetic compounds is a longstanding issue in solid state physics and nonmagnetic ligand ions are considered to contribute little to magnetic a…
Stoichiometric growth of SrTiO3 films via Bayesian optimization with adaptive prior mean
Yuki K. Wakabayashi, Takuma Otsuka, Yoshiharu Krockenberger +3
Perovskite insulator SrTiO3 is expected to be applied to the next generation of electronic and photonic devices as high-k capacitors and photocatalysts. However, reproducible growt…
Scattering-dependent transport of SrRuO3 films: From Weyl fermion transport to hump-like Hall effect anomaly
Shingo Kaneta-Takada, Yuki K. Wakabayashi, Yoshiharu Krockenberger +5
Recent observation of quantum transport phenomena of Weyl fermions has brought much attention to 4d ferromagnetic perovskite SrRuO3 as a magnetic Weyl semimetal. Besides, the hump-…
Origin of magnetically dead layers in spinel ferrites grown on : Effects of post-deposition annealing studied by XMCD
Yosuke Nonaka, Yuki K. Wakabayashi, Goro Shibata +8
We study the electronic and magnetic states of as-grown and annealed (111)/(111) () thin films with various thicknes…
Properties of group-IV-based ferromagnetic semiconductor GeFe: Growth temperature dependence, lattice constant, location of Fe atoms, and their relevance to the magnetic properties
Yuki Wakabayashi, Shinobu Ohya, Yoshisuke Ban +1
We report the growth temperature dependence of the properties of the group-IV-based ferromagnetic semiconductor Ge1-xFex films (x = 6.5% and 10.5%), including the lattice constant,…
Carrier transport properties of the Group-IV ferromagnetic semiconductor Ge1-xFex with and without boron doping
Yoshisuke Ban, Yuki Wakabayashi, Ryota Akiyama +2
We have investigated the transport and magnetic properties of group-IV ferromagnetic semiconductor Ge1-xFex films (x = 1.0 and 2.3 %) with and without boron doping grown by molecul…