activity
20012019
most citedElectronic structure and transport anisotropy of Bi2Te3 and Sb2Te3

147 citations · 595 across the 8 of their papers we have counts for

collaborators

8 papers

cond-mat.mes-hall2019★ 143 cited

Unconventional charge-spin conversion in Weyl-semimetal WTe2

Bing Zhao, Bogdan Karpiak, Dmitrii Khokhriakov +6

An outstanding feature of topological quantum materials is their novel spin topology in the electronic band structures with an expected large charge-to-spin conversion efficiency.…

cond-mat.mtrl-sci2013★ 89 cited

Pressure-induced Topological Phase Transitions in Rock-salt Chalcogenides

P. Barone, T. Rauch, D. Di Sante +3

By means of a comprehensive theoretical investigation, we show that external pressure can induce topological phase transitions in IV-VI semiconducting chalcogenides with rock-salt…

cond-mat.mtrl-sci2012★ 67 cited

Thermoelectric transport in superlattices

N. F. Hinsche, B. Yu. Yavorsky, M. Gradhand +6

The thermoelectric transport properties of superlattices are analyzed on the basis of first-principles calculations and semi-classica…

cond-mat.mtrl-sci2012★ 34 cited

Thermoelectric transport in strained Si and Si/Ge heterostructures

N. F. Hinsche, I. Mertig, P. Zahn

The anisotropic thermoelectric transport properties of bulk silicon strained in [111]-direction were studied by detailed first-principles calculations focussing on a possible enhan…

cond-mat.mtrl-sci2011★ 147 cited

Electronic structure and transport anisotropy of Bi2Te3 and Sb2Te3

B. Y. Yavorsky, N. F. Hinsche, P. Zahn +1

On the basis of detailed ab initio studies the influence of strain on the anisotropy of the transport distribution of the thermoelectrics BiTe and SbTe was investig…

cond-mat.mtrl-sci2010★ 26 cited

Strong influence of the complex bandstructure on the tunneling electroresistance: A combined model and ab-initio study

N. F. Hinsche, M. Fechner, P. Bose +4

The tunneling electroresistance (TER) for ferroelectric tunnel junctions (FTJs) with BaTiO_{3} (BTO) and PbTiO}_{3} (PTO) barriers is calculated by combining the microscopic electr…