2 papers
cond-mat.mtrl-sci2023
Epitaxial Growth of Boron Carbide on 4H-SiC
Yamina Benamra, Laurent Auvray, Jérôme Andrieux +6
In this work, the successful heteroepitaxial growth of boron carbide (B x C) on 4HSiC(0001) 4{\textdegree} off substrate using chemical vapor deposition (CVD) is reported. Towards…
cond-mat.mtrl-sci2014
Ge incorporation inside 4H-SiC during Homoepitaxial growth by chemical vapor deposition
Kassem Alassaad, Véronique Soulière, François Cauwet +7
In this work, we report on the addition of GeH4 gas during homoepitaxial growth of 4H-SiC by chemical vapour deposition. Ge introduction does not affect dramatically the surface mo…