Ge incorporation inside 4H-SiC during Homoepitaxial growth by chemical vapor deposition

Kassem Alassaad, Véronique Soulière, François Cauwet +7

In this work, we report on the addition of GeH4 gas during homoepitaxial growth of 4H-SiC by chemical vapour deposition. Ge introduction does not affect dramatically the surface mo…