Nanorippling of GaAs (001) surface near the threshold energy of sputtering at normal ion incidence

Debasree Chowdhury, Debabrata Ghose*, Safiul Alam Mollick +2

Ripple formation driven by Ehrlich-Schwoebel barrier is evidenced for normal incidence 30 eV Ar+ bombardment of GaAs (001) surface at elevated target temperature. The pattern follo…