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Ezra Bussmann

3 papers here

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • first author1
  • last author1

Across the 2 of 3 papers where every author was matched, so the position is known.

fields
  • cond-mat.mtrl-sci2
  • cond-mat.mes-hall1
ORCID 0000-0002-5285-2825

identity via Semantic Scholar / OpenAlex

most citedHeterogeneous nucleation of pits via step pinning during Si(100) homoepitaxy

8 citations · 10 across the 3 of their papers we have counts for

collaborators

3 papers

cond-mat.mtrl-sci2017★ 8 cited

Heterogeneous nucleation of pits via step pinning during Si(100) homoepitaxy

E. N. Yitamben, R. E. Butera, B. S. Swartzentruber +4

Using scanning tunneling microscopy (STM), we investigate oxide-induced growth pits in Si thin films deposited by molecular beam epitaxy. In the transition temperature range from 2…

cond-mat.mtrl-sci2014★ 2 cited

Imaging and registration of buried atomic-precision donor devices using scanning capacitance microscopy

E. Bussmann, M. Rudolph, G. S. Subramania +7

We show that a scanning capacitance microscope (SCM) can image buried delta-doped donor nanostructures fabricated in Si via a recently developed atomic-precision scanning tunneling…

cond-mat.mes-hall2014

Probing limits of STM field emission patterned Si:P δ-doped devices

M. Rudolph, S. M. Carr, G. Subramania +6

Recently, a single atom transistor was deterministically fabricated using phosphorus in Si by H-desorption lithography with a scanning tunneling microscope (STM). This milestone in…

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Not affiliated with arXiv. Researcher data from Semantic Scholar (ODC-BY) and OpenAlex.