8 citations · 15 across the 2 of their papers we have counts for
2 papers
cond-mat.mtrl-sci2017★ 7 cited
Atomic-layer doping of SiGe heterostructures for atomic-precision donor devices
E. Bussmann, John King Gamble, J. C. Koepke +9
As a first step to porting scanning tunneling microscopy methods of atomic-precision fabrication to a strained-Si/SiGe platform, we demonstrate post-growth P atomic-layer doping of…
cond-mat.mtrl-sci2017★ 8 cited
Heterogeneous nucleation of pits via step pinning during Si(100) homoepitaxy
E. N. Yitamben, R. E. Butera, B. S. Swartzentruber +4
Using scanning tunneling microscopy (STM), we investigate oxide-induced growth pits in Si thin films deposited by molecular beam epitaxy. In the transition temperature range from 2…