3 citations · 5 across the 4 of their papers we have counts for
4 papers
Transport spectroscopy of low disorder silicon tunnel barriers with and without Sb implants
A. Shirkhorshidian, N. C. Bishop, J. Dominguez +4
We present transport measurements of silicon MOS split gate structures with and without Sb implants. We observe classical point contact (PC) behavior that is free of any pronounced…
Imaging and registration of buried atomic-precision donor devices using scanning capacitance microscopy
E. Bussmann, M. Rudolph, G. S. Subramania +7
We show that a scanning capacitance microscope (SCM) can image buried delta-doped donor nanostructures fabricated in Si via a recently developed atomic-precision scanning tunneling…
Probing limits of STM field emission patterned Si:P -doped devices
M. Rudolph, S. M. Carr, G. Subramania +6
Recently, a single atom transistor was deterministically fabricated using phosphorus in Si by H-desorption lithography with a scanning tunneling microscope (STM). This milestone in…
Spontaneous emission in a silicon charge qubit
Khoi T. Nguyen, N. Tobias Jacobson, Michael P. Lilly +6
The interaction between a qubit and its environment provides a channel for energy relaxation which has an energy-dependent timescale governed by the specific coupling mechanism. We…