83 citations · 188 across the 7 of their papers we have counts for
7 papers
Fully epitaxial fcc(111) magnetic tunnel junctions with a Co90Fe10/MgAlO/Co90Fe10 structure
Jieyuan Song, Thomas Scheike, Cong He +5
Magnetic tunnel junctions (MTJs) with bcc(001)-type structures such as Fe(001)/MgO(001)/Fe(001), have been widely used as the core of various spintronic devices such as magnetoresi…
Oxide layer dependent orbital torque efficiency in ferromagnet/Cu/Oxide heterostructures
Junyeon Kim, Jun Uzuhashi, Masafumi Horio +10
The utilization of orbital transport provides a versatile and efficient spin manipulation mechanism. As interest in orbital-mediated spin manipulation grows, we face a new issue to…
Enhanced Tunnel magnetoresistance in Fe/Mg4Al-Ox/Fe(001) Magnetic Tunnel Junctions
Thomas Scheike, Zhenchao Wen, Hiroaki Sukegawa +1
Spinel MgAl2O4 and family oxides are emerging barrier materials useful for magnetic tunnel junctions (MTJs). We report large tunnel magnetoresistance (TMR) ratios up to 429% at roo…
Electric field modulation of the non-linear areal magnetic anisotropy energy
Yong-Chang Lau, Peng Sheng, Seiji Mitani +2
We study the ferromagnetic layer thickness dependence of the voltage-controlled magnetic anisotropy (VCMA) in gated CoFeB/MgO heterostructures with heavy metal underlayers. When th…
Voltage control of magnetic anisotropy in epitaxial Ru/Co2FeAl/MgO heterostructures
Zhenchao Wen, Hiroaki Sukegawa, Takeshi Seki +3
Voltage control of magnetic anisotropy (VCMA) in magnetic heterostructures is a key technology for achieving energy-efficiency electronic devices with ultralow power consumption. H…
Current driven asymmetric magnetization switching in perpendicularly magnetized CoFeB/MgO heterostructures
Jacob Torrejon, Felipe Garcia-Sanchez, Tomohiro Taniguchi +4
The flow of in-plane current through ultrathin magnetic heterostructures can cause magnetization switching or domain wall nucleation owing to bulk and interfacial effects. Within t…