activity
20142023
most cited3D full-band, Atomistic Quantum transport in n-Si Junction less Nanowire field-effect transistors

2 citations · 3 across the 7 of their papers we have counts for

collaborators

7 papers

cond-mat.mtrl-sci2023

Materials Informatics: An Algorithmic Design Rule

Bhupesh Bishnoi

Materials informatics, data-enabled investigation, is a "fourth paradigm" in materials science research after the conventional empirical approach, theoretical science, and computat…

cond-mat.mes-hall2022

Electronic Transport in Electron-Phonon Gas of Two-Dimensional Holstein's Organic Molecular-Crystal: Non-equilibrium Green's Function Formalism & Boltzmann Transport Framework (A Generalized Mathematical Solution)

Bhupesh Bishnoi

We have presented a consistent electronic transport framework for the two-dimensional extended Holstein's organic molecular-crystal based upon complete quantum-mechanical treatment…

quant-ph20221 cited

Lagrangian Density Space-Time Deep Neural Network Topology

Bhupesh Bishnoi

As a network-based functional approximator, we have proposed a "Lagrangian Density Space-Time Deep Neural Networks" (LDDNN) topology. It is qualified for unsupervised training and…

cond-mat.mtrl-sci20142 cited

3D full-band, Atomistic Quantum transport in n-Si Junction less Nanowire field-effect transistors

Bhupesh Bishnoi, Bahniman Ghosh

In the present work, we have investigated the quantum transport in n Si junction less nanowire field effect transistors using 3 D, full band atomistic sp3d5s spin orbital coupled t…

cond-mat.mtrl-sci2014

Ballistic quantum transport in L-shaped Vertical Halo-Implanted p+-GaSb/InAs n-TFETs

Bhupesh Bishnoi, BahnimanGhosh

In the present work, we have investigated ballistic quantum transport in vertical halo implanted p plus minus GaSb InAs n TFETs. We have investigated the current voltage characteri…

cond-mat.mtrl-sci2014

p+-Al0.3Ga0.7Sb Pocket-Implanted L-shaped GaSb/InAs Heterojunction Vertical n-TFETs

Bhupesh Bishnoi, Bahniman Ghosh

In the present work, we have investigated the performances of p plus minus Al0.3Ga0.7Sb Pocket Implanted L shaped GaSb InAs staggered bandgap SG heterojunction vertical n channel t…