72 citations · 74 across the 2 of their papers we have counts for
2 papers
cond-mat.mtrl-sci2016★ 72 cited
Strained GaN Quantum-Well FETs on Single Crystal Bulk AlN Substrates
Meng Qi, Guowang Li, Satyaki Ganguly +8
We report the first realization of molecular beam epitaxy grown strained GaN quantum well field-effect transistors on single-crystal bulk AlN substrates. The fabricated double hete…
cond-mat.mtrl-sci2014★ 2 cited
Strain Sensitivity in the Nitrogen 1s NEXAFS Spectra of Gallium Nitride
Andrew Ritchie, Shaylin Eger, Chelsey Wright +9
The Nitrogen 1s near edge X-ray absorption fine structure (NEXAFS) of gallium nitride (GaN) shows a strong natural linear dichroism that arises from its anisotropic wurtzite struct…