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Gapped Nearly Free-Standing Graphene on an SiC(0001) Substrate Induced by Manganese Atoms
Jinwoong Hwang, Ji-Eun Lee, Minhee Kang +4
The electron band structure of manganese-adsorbed graphene on an SiC(0001) substrate has been studied using angle-resolved photoemission spectroscopy. Upon introducing manganese at…
Identifying substitutional oxygen as a prolific point defect in monolayer transition metal dichalcogenides with experiment and theory
Sara Barja, Sivan Refaely-Abramson, Bruno Schuler +17
Chalcogen vacancies are considered to be the most abundant point defects in two-dimensional (2D) transition-metal dichalcogenide (TMD) semiconductors, and predicted to result in de…
Electric Field-Tuned Topological Phase Transition in Ultra-Thin Na3Bi - Towards a Topological Transistor
James L. Collins, Anton Tadich, Weikang Wu +11
The electric field induced quantum phase transition from topological to conventional insulator has been proposed as the basis of a topological field effect transistor [1-4]. In thi…
Observation of Topologically Protected States at Crystalline Phase Boundaries in Single-layer WSe2
Miguel M. Ugeda, Artem Pulkin, Shujie Tang +12
Transition metal dichalcogenide (TMD) materials are unique in the wide variety of structural and electronic phases they exhibit in the two-dimensional (2D) single-layer limit. Here…
Direct observation of strain-induced orbital valence band splitting in HfSe by sodium intercalation
T. Eknapakul, I. Fongkaew, S. Siriroj +8
By using angle-resolved photoemission spectroscopy (ARPES), the variation of the electronic structure of HfSe has been studied as a function of sodium intercalation. We observe…