3C-SiC grown on Si by using a Si${}_{1-x}$Ge${}_x$ buffer layer

M. Zimbone, M. Zielinski, E. G. Barbagiovanni +2

Cubic silicon carbide (3C-SiC) is an emerging material for high power and new generation devices, but the development of high quality 3C-SiC layer still represents a scientific and…