activity
20112026
most citedEnhanced metal-insulator transition in freestanding VO2 down to 5 nm thickness

41 citations · 98 across the 7 of their papers we have counts for

collaborators
Showing 2011Show all

1 paper · 1 filter

cond-mat.mtrl-sci2011★ 32 cited

Negative tunneling magnetoresistance by canted magnetization in MgO/NiO tunnel barriers

Hyunsoo Yang, See-Hun Yang, Dong-Chen Qi +6

The influence of insertion of an ultra-thin NiO layer between the MgO barrier and ferromagnetic electrode in magnetic tunnel junctions has been investigated by measuring the tunnel…