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cond-mat.mtrl-sci2025
Vibrational properties of epitaxial graphene buffer layer on silicon carbide
Guillaume Radtke, Michele Lazzeri
The vibrational properties of semiconducting graphene buffer layer epitaxially grown on hexagonal silicon carbide are determined using first-principles calculations on a realistic…
cond-mat.mtrl-sci2012★ 44 cited
Temperature evolution of infrared- and Raman-active phonons in graphite
P. Giura, N. Bonini, G. Creff +3
We perform a comparative experimental and theoretical study of the temperature dependence up to 700 K of the frequency and linewidths of the graphite E1u and E2g optical phonons (~…