activity
20122021
most citedToward III-V/Si co-integration by controlling biatomic steps on hydrogenated Si(001)

56 citations · 258 across the 8 of their papers we have counts for

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Showing cond-mat.mtrl-sciShow all

8 papers · 1 filter

cond-mat.mtrl-sci2020

Dispersing and semi-flat bands in the wide band gap two-dimensional semiconductor bilayer silicon oxide

G. Kremer, J. C. Alvarez-Quiceno, T. Pierron +11

Epitaxial bilayer silicon oxide is a transferable two-dimensional material predicted to be a wide band gap semiconductor, with potential applications for deep UV optoelectronics, o…

cond-mat.mtrl-sci202040 cited

Transferability of neural network potentials for varying stoichiometry: phonons and thermal conductivity of MnGe compounds

Claudia Mangold, Shunda Chen, Giuseppe Barbalinardo +7

Germanium manganese compounds exhibit a variety of stable and metastable phases with different stoichiometry. These materials entail interesting electronic, magnetic and thermal pr…

cond-mat.mtrl-sci20209 cited

Growth, charge and thermal transport of flowered graphene

Alessandro Cresti, Jesús Carrete, Hanako Okuno +4

We report on the structural and transport properties of the smallest dislocation loop in graphene, known as a flower defect. First, by means of advanced experimental imaging techni…

cond-mat.mtrl-sci201921 cited

Electronic band structure of ultimately thin silicon oxide on Ru(0001)

G. Kremer, J. C. Alvarez-Quiceno, S. Lisi +12

Silicon oxide can be formed in a crystalline form, when prepared on a metallic substrate. It is a candidate support catalyst and possibly the ultimately-thin version of a dielectri…

cond-mat.mtrl-sci201753 cited

Toward Moiré engineering in 2D materials via dislocation theory

P. Pochet, B. McGuigan, J. Coraux +1

We present a framework that explains the strong connection in 2D materials between mechanics and electronic structure, via dislocation theory. Within this framework, Moiré patterns…

cond-mat.mtrl-sci201743 cited

Millimeter-scale layered MoSe2 grown on sapphire and evidence for negative magnetoresistance

M. T. Dau, C. Vergnaud, A. Marty +10

Molecular beam epitaxy technique has been used to deposit a single layer and a bilayer of MoSe 2 on sapphire. Extensive characterizations including in-situ and ex-situ measurements…