From the 1 of 4 linked papers with an AI index.
4 papers
On the electronic and vibrational dimensionality of nanometer-scale silicon structures
Massimo V. Fischetti, Dallin O. Nielsen, Edward Chen
We discuss the problem of assessing the electronic and vibrational dimensionality of a semiconductor nanostructure: How thin and/or wide must a nanostructure be in order to induce…
Electron transport in a 1.6~nm-thick double-gated (100) silicon nanosheet: A theoretical study accounting for phonon confinement and remote-phonon scattering
Shoaib Mansoori, Bimin Cai, Edward Chen +2
We study theoretically electron transport in an top-and bottom-gated (100) 1.6 nm-thin silicon nanosheet with SiO2/HfO2 gate stacks, focusing on the intrinsic physical processes th…
On the static dielectric constant of thin dielectrics in extremely scaled silicon nanosheet transistors
Massimo V. Fischetti, Dallin O. Nielsen, Edward Chen
The paper examines how the static dielectric constant of thin semiconductor and insulator nanostructures is influenced by their surroundings, reviewing electronic and ionic contrib…
Dominant scattering mechanisms in the low/high electric field transport in cryogenic 2D confinement in Silicon (110) with high- oxides
Hsin-Wen Huang, Xi-Jun Fang, Edward Chen +1
The performance of silicon nano-devices at cryogenic temperatures is critical for quantum qubit control circuits and space applications. Using multi-valley Monte Carlo simulations,…