59 citations · 384 across the 23 of their papers we have counts for
3 papers · 1 filter
Study of X-ray radiation damage in the AGIPD sensor for the European XFEL
Jiaguo Zhang, Eckhart Fretwurst, Heinz Graafsma +3
The European X-ray Free Electron Laser (XFEL), currently being constructed in Hamburg and planning to be operational in 2017 for users, will deliver 27,000 fully coherent, high bri…
Time dependence of charge losses at the Si-SiO2 interface in p+n-silicon strip sensors
Thomas Poehlsen, Eckhart Fretwurst, Robert Klanner +2
The collection of charge carriers generated in p+n strip sensors close to the Si-SiO2 interface before and after 1 MGy of X-ray irradiation has been investigated using the transien…
Study of the accumulation layer and charge losses at the Si-SiO2 interface in p+n-silicon strip sensors
Thomas Poehlsen, Julian Becker, Eckhart Fretwurst +3
Using the multi-channel Transient Current Technique the currents induced by electron-hole pairs, produced by a focussed sub-nanosecond laser of 660 nm wavelength close to the Si-Si…