80 citations · 259 across the 15 of their papers we have counts for
16 papers
Selective Area Growth Rates of III-V Nanowires
Martin Espiñeira Cachaza, Anna Wulff Christensen, Daria Beznasyuk +6
Selective area growth (SAG) of semiconductors is a scalable method for fabricating gate-controlled quantum platforms. This letter reports on the adatom diffusion, incorporation, an…
Collective formation of misfit dislocations at the critical thickness for equilibrium nanowire heterostructures
Thue Christian Thann, Tobias Særkjær, Sergej Schuwalow +1
In this work we model the evolution of strain energy during different growth stages of heterostructure nanowires. We find that the minimum energy configuration changes abruptly fro…
Electronic structure of InAs and InSb surfaces: density functional theory and angle-resolved photoemission spectroscopy
Shuyang Yang, Niels B. M. Schröter, Sergej Schuwalow +10
The electronic structure of surfaces plays a key role in the properties of quantum devices. However, surfaces are also the most challenging to simulate and engineer. Here, we study…
Electronic properties of InAs/EuS/Al hybrid nanowires
Chun-Xiao Liu, Sergej Schuwalow, Yu Liu +4
We study the electronic properties of InAs/EuS/Al heterostructures as explored in a recent experiment [S. Vaitiekenas \emph{et al.}, Nat. Phys. (2020)], combining both spectroscopi…
Band bending profile and band offset extraction at semiconductor-metal interfaces
Sergej Schuwalow, Niels B. M. Schroeter, Jan Gukelberger +11
The band alignment of semiconductor-metal interfaces plays a vital role in modern electronics, but remains difficult to predict theoretically and measure experimentally. For interf…
Coherent Epitaxial Semiconductor-Ferromagnetic Insulator InAs/EuS Interfaces: Band Alignment and Magnetic Structure
Yu Liu, Alessandra Luchini, Sara Martí-Sánchez +16
Hybrid semiconductor-ferromagnetic insulator heterostructures are interesting due to their tunable electronic transport, self-sustained stray field and local proximitized magnetic…