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Topological Weyl phase transition in MoWTe
Ilya Belopolski, Daniel S. Sanchez, Yukiaki Ishida +21
Topological phases of matter exhibit phase transitions between distinct topological classes. These phase transitions are exotic in that they do not fall within the traditional Ginz…
Atomic-scale visualization of quasiparticle interference on a type-II Weyl semimetal surface
Hao Zheng, Guang Bian, Guoqing Chang +15
We combine quasiparticle interference simulation (theory) and atomic resolution scanning tunneling spectro-microscopy (experiment) to visualize the interference patterns on a type-…
Nontrivial Berry phase and type II Dirac transport in layered material PdTe2
Fucong Fei, Xiangyan Bo, Rui Wang +11
Here we report the evidence of the type II Dirac Fermion in the layered crystal PdTe2. The de Haas-van Alphen oscillations find a small Fermi pocket with a cross section of 0.077nm…
Unsaturated magnetoconductance of epitaxial La0.7Sr0.3MnO3 thin films in pulsed magnetic fields up to 60 T
Wei Niu, Xuefeng Wang, Ming Gao +6
We report on the temperature and field dependence of resistance of La0.7Sr0.3MnO3 thin films over a wide temperature range and in pulsed magnetic fields up to 60 T. The epitaxial L…
Measuring Chern numbers above the Fermi level in the Type II Weyl semimetal MoWTe
Ilya Belopolski, Su-Yang Xu, Yukiaki Ishida +30
It has recently been proposed that electronic band structures in crystals give rise to a previously overlooked type of Weyl fermion, which violates Lorentz invariance and, conseque…
Evidence of both surface and bulk Dirac bands in ZrSiS and the unconventional magnetoresistance
Xuefeng Wang, Xingchen Pan, Ming Gao +15
The unconventional magnetoresistance of ZrSiS single crystals is found unsaturated till the magnetic field of 53 T with the butterfly shaped angular dependence. Intense Shubnikov-d…
Quantum oscillation and nontrivial transport in the Dirac Semimetal Cd3As2 nanodevice
Haiyang Pan, Kang Zhang, Zhongxia Wei +9
Here we demonstrate the Shubnikov de Haas oscillation in high-quality Cd3As2 nanowires grown by a chemical vapor deposition approach. The dominant transport of topological Dirac fe…
Weak antilocalization in Cd3As2 thin films
Bo Zhao, Peihong Cheng, Haiyang Pan +5
Recently, it has been theoretically predicted that Cd3As2 is a three dimensional Dirac material, a new topological phase discovered after topological insulators, which exhibits a l…
Repairing atomic vacancies in single-layer MoSe2 field-effect transistor and its defect dynamics
Yuze Meng, Chongyi Ling, Run Xin +10
Here we repair the single-layer MoSe2 field-effect transistors by the EDTA processing, after which the devices' room-temperature carrier mobility increases from 0.1 to over 70cm2/V…