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cond-mat.mes-hall2004
Advancements in Complementary Carbon Nanotube Field-Effect Transistors
Ali Javey, Qian Wang, Woong Kim +1
High performance p- and n-type single-walled carbon nanotube (SWNT) field-effect transistors (FETs) are obtained by using high and low work function metals, Pd and Al as source/dra…
cond-mat.mes-hall2003★ 31 cited
Predicted Performance Advantages of Carbon Nanotube Transistors with Doped Nanotubes as Source/Drain
Jing Guo, Ali Javey, Hongjie Dai +2
Most carbon nanotube field-effect transistors (CNTFETs) directly attach metal source/drain contacts to an intrinsic nanotube channel. When the gate oxide thickness is reduced, such…