19 citations · 22 across the 3 of their papers we have counts for
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cond-mat.mes-hall2015★ 19 cited
Si Nanowire - Array Source Gated Transistors
Charles Opoku, Radu Sporea, Vlad Stolojan +2
Solution processed field-effect transistors based on single crystalline silicon nanowires (Si NWs) with metal Schottky contacts are demonstrated. The semiconducting layer was depos…
cond-mat.mes-hall2015★ 3 cited
Electrical analysis of hysteresis in solution processed silicon nanowire field effect transistors
K. Prabha Rajeev, C. Opoku, V. Stolojan +2
Silicon nanowires (Si NW) are ideal candidates for solution processable field effect transistors (FETs). The interface between the nanowire channel and the gate dielectric plays a…