15 citations · 24 across the 6 of their papers we have counts for
7 papers
Growth and Morphology of InN Nanowires on Si<111> and Si<100> at Back-End-Of-Line Compatible Temperatures
Andrea Orlando-cunnac, Arthur Arnaud, Martien Den Hertog +4
InN nanowires were grown on Si<111> and Si<100> substrates by plasma-assisted molecular beam epitaxy using a thin AlN buffer layer at temperatures compatible with the thermal budge…
Reversible Al Propagation in SiGe Nanowires
Minh Anh Luong, Robin Eric, Pauc Nicolas +8
While reversibility is a fundamental concept in thermodynamics, most reactions are not readily reversible, especially in solid state physics. For example, thermal diffusion is a wi…
In-situ high resolution TEM observation of Aluminum solid-state diffusion in Germanium nanowires: fabricating sub-10 nm Ge quantum dots
M. Luong, E. Robin, N. Pauc +6
Aluminum-germanium nanowires (NWs) thermal activated solid state reaction is a promising system as very sharp and well defined one dimensional contacts can be created between a met…
Light / heavy hole switching with correlated characterization on a single quantum dot : Probing the light hole / heavy hole switching with correlated magneto-optical spectroscopy and chemical analysis on a single quantum dot
Alberto Artioli, Pamela Rueda-Fonseca, Kimon Moratis +9
A whole series of complementary studies have been performed on the same, single nanowire containing a quantum dot: cathodoluminescence spectroscopy and imaging, micro-photoluminesc…
Diffusion-driven growth of nanowires by low-temperature molecular beam epitaxy
P. Rueda-Fonseca, M. Orrù, E. Bellet-Amalric +6
With ZnTe as an example, we use two different methods to unravel the characteristics of the growth of nanowires by gold-catalyzed molecular beam epitaxy at low temperature. In the…
Insertion of CdSe quantumdots in ZnSe nanowires : MBE growth and microstructure analysis
Martien Den Hertog, Miryam Elouneg-Jamroz, Edith Bellet-Amalric +7
ZnSe nanowire growth has been successfully achieved on ZnSe (100) and (111)B buffer layers deposited on GaAs substrates. Cubic [100] oriented ZnSe nanowires or [0001] oriented hexa…
Polarity determination in ZnSe nanowires by HAADF STEM
Martien Den Hertog, Miryam Elouneg-Jamroz, Edith Bellet-Amalric +7
High angle annular dark field scanning transmission electron microscopy is used to analyze the polarity of ZnSe nanowires grown, by molecular beam epitaxy, on GaAs substrates. The…