A comparative study of SiC epitaxial growth in vertical hotwall CVD reactor using silane and dichlorosilane precursor gases

Tawhid Rana, MVS Chandrashekhar, Haizheng Song +1

SiC epitaxial films grown in an inverted chimney CVD reactor are analyzed and compared for growth rates, doping concentration and surface morphology using silane-propane-hydrogen a…