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D. Anjum

3 papers hereh-index 5915.5k citations364 works total

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  • cond-mat.mtrl-sci3

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activity
20122017
most citedStudy Of Si-Ge Interdiffusion With a High Phosphorus Doping Concentration

17 citations · 33 across the 3 of their papers we have counts for

collaborators

3 papers

cond-mat.mtrl-sci2017

Impacts of Doping on Epitaxial Germanium Thin Film Quality and Si-Ge Interdiffusion

Guangnan Zhou, Kwang Hong Lee, Dalaver H. Anjum +5

Ge-on-Si structures with three different dopants (P, As and B) and those without intentional doping were grown and annealed. Several different materials characterization methods ha…

cond-mat.mtrl-sci2016★ 17 cited

Study Of Si-Ge Interdiffusion With a High Phosphorus Doping Concentration

Feiyang Cai, Dalaver H. Anjum, Xixiang Zhang +2

Si-Ge interdiffusion with a high phosphorus doping level was investigated by both experiments and modeling. Ge/Si1-xGex/Ge multi-layer structures with 0.75<x_Ge<1 , a mid-10^18 to…

cond-mat.mtrl-sci2012★ 16 cited

Electron irradiation induced reduction of the permittivity in chalcogenide glass (As2S3) thin film

Damián P. San-Román-Alerigi, Dalaver H. Anjum, Yaping Zhang +5

We investigate the effect of electron beam irradiation on the dielectric properties of As2S3 Chalcogenide glass. By means of low-loss Electron Energy Loss Spectroscopy, we derive t…

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