activity
20022023
most citedPhase diagram and superconducting dome of infinite-layer thin films

344 citations · 2.7k across the 36 of their papers we have counts for

collaborators

36 papers

cond-mat.mtrl-sci2023

A multiscale generative model to understand disorder in domain boundaries

Jiadong Dan, Moaz Waqar, Ivan Erofeev +4

A continuing challenge in atomic resolution microscopy is to identify significant structural motifs and their assembly rules in synthesized materials with limited observations. Her…

cond-mat.supr-con2022★ 103 cited

Ordered and tunable Majorana-zero-mode lattice in naturally strained LiFeAs

Meng Li, Geng Li, Lu Cao +7

Majorana zero modes (MZMs) obey non-Abelian statistics and are considered building blocks for constructing topological qubits. Iron-based superconductors with topological band stru…

physics.optics2022★ 329 cited

Ultrathin quantum light source enabled by a nonlinear van der Waals crystal with vanishing interlayer-electronic-coupling

Qiangbing Guo, Xiao-Zhuo Qi, Meng Gao +19

Interlayer electronic coupling in two-dimensional (2D) materials enables tunable and emergent properties by stacking engineering. However, it also brings significant evolution of e…

cond-mat.supr-con2021★ 4 cited

Titanium doped kagome superconductor CsV3-xTixSb5 and two distinct phases

Haitao Yang, Zihao Huang, Yuhang Zhang +22

The vanadium-based kagome superconductor CsV3Sb5 has attracted tremendous attention due to its unexcepted anomalous Hall effect (AHE), charge density waves (CDWs), nematicity, and…

cond-mat.mtrl-sci2021★ 14 cited

Experimental Evidence of t2g Electron-Gas Rashba Interaction Induced by Asymmetric Orbital Hybridization

Ganesh Ji Omar, Weilong Kong, Hariom Jani +11

We report the control of Rashba spin-orbit interaction by tuning asymmetric hybridization between Ti-orbitals at the LaAlO3/SrTiO3 interface. This asymmetric orbital hybridization…

physics.app-ph2021★ 242 cited

Atomically sharp interface enabled ultrahigh-speed, nonvolatile memory devices

Liangmei Wu, AiWei Wang, Jinan Shi +14

Development of memory devices with ultimate performance has played a key role in innovation of modern electronics. As a mainstream technology nonvolatile memory devices have manife…