3 papers
cond-mat.mtrl-sci2026
Interface stability of beta-Ga2O3 (100) on oxidized Si- and C-terminated 3C-SiC (001) substrates: a first-principles investigation
Marica Licciardi, Aldo Ugolotti, Emilio Scalise +1
We provide a first-principles modeling of the beta-Ga2O3/3C-SiC interface that takes into account the reconstructions occurring at the 3C-SiC (001) surface by oxidation, aiming to…
cond-mat.mtrl-sci2024
Interface energies of Ga2O3 phases with the sapphire substrate and the phase-locked epitaxy of metastable structures explained
Ilaria Bertoni, Aldo Ugolotti, Emilio Scalise +2
Despite the extensive work carried out on the epitaxial growth of Ga2O3, a fundamental understanding of the nucleation of its different metastable phases is still lacking. Here we…
cond-mat.mtrl-sci2024
Formation of Micrometer-Sized Textured Hexagonal Silicon Crystals via Nanoindentation
Mouad Bikerouin, Anna Marzegalli, Davide Spirito +10
We present a comprehensive study on the formation of micrometer-sized, textured hexagonal diamond silicon (hd-Si) crystals via nanoindentation followed by annealing. Utilizing adva…