101 citations · 229 across the 5 of their papers we have counts for
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cond-mat.mtrl-sci2017★ 1 cited
Passivation of dangling bonds on hydrogenated Si(100)-21: a possible method for error correction in hydrogen lithography
Niko Pavliček, Zsolt Majzik, Gerhard Meyer +1
Using combined low temperature scanning tunneling microscopy (STM) and atomic force microscopy (AFM), we demonstrate hydrogen passivation of individual, selected dangling bonds (DB…
cond-mat.mtrl-sci2017★ 15 cited
Atomic and Electronic Structure of Si Dangling Bonds in Quasi-Free-Standing Monolayer Graphene
Yuya Murata, Tommaso Cavallucci, Valentina Tozzini +7
Si dangling bonds without H termination at the interface of quasi-free standing monolayer graphene (QFMLG) are known scattering centers that can severely affect carrier mobility. I…