140 citations · 421 across the 6 of their papers we have counts for
4 papers · 1 filter
Fermi level position, Coulomb gap, and Dresselhaus splitting in (Ga,Mn)As
S. Souma, L. Chen, R. Oszwaldowski +5
Carrier-induced nature of ferromagnetism in a ferromagnetic semiconductor, (Ga,Mn)As, offers a great opportunity to observe novel spin-related phenomena as well as to demonstrate n…
CoFeB Thickness Dependence of Thermal Stability Factor in CoFeB/MgO Perpendicular Magnetic Tunnel Junctions
H. Sato, M. Yamanouchi, K. Miura +4
Thermal stability factor (delta) of recording layer was studied in perpendicular anisotropy CoFeB/MgO magnetic tunnel junctions (p-MTJs) with various CoFeB recording layer thicknes…
MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers
K. Mizunuma, S. Ikeda, J. H. Park +7
The authors studied an effect of ferromagnetic (Co20Fe60B20 or Fe) layer insertion on tunnel magnetoresistance (TMR) properties of MgO-barrier magnetic tunnel junctions (MTJs) with…
Domain-wall resistance in ferromagnetic (Ga,Mn)As
D. Chiba, M. Yamanouchi, F. Matsukura +2
A series of microstructures designed to pin domain-walls (DWs) in (Ga,Mn)As with perpendicular magnetic anisotropy has been employed to determine extrinsic and intrinsic contributi…