activity
20122023
most citedCorrelation between the spin Hall angle and the structural phases of early 5d transition metals

143 citations · 640 across the 15 of their papers we have counts for

collaborators

15 papers

cond-mat.mtrl-sci2023★ 1 cited

Fully epitaxial fcc(111) magnetic tunnel junctions with a Co90Fe10/MgAlO/Co90Fe10 structure

Jieyuan Song, Thomas Scheike, Cong He +5

Magnetic tunnel junctions (MTJs) with bcc(001)-type structures such as Fe(001)/MgO(001)/Fe(001), have been widely used as the core of various spintronic devices such as magnetoresi…

cond-mat.mtrl-sci2023★ 1 cited

Oxide layer dependent orbital torque efficiency in ferromagnet/Cu/Oxide heterostructures

Junyeon Kim, Jun Uzuhashi, Masafumi Horio +10

The utilization of orbital transport provides a versatile and efficient spin manipulation mechanism. As interest in orbital-mediated spin manipulation grows, we face a new issue to…

cond-mat.mtrl-sci2022★ 51 cited

Sm-Co-based amorphous alloy films for zero-field operation of transverse thermoelectric generation

Rajkumar Modak, Yuya Sakuraba, Takamasa Hirai +8

Transverse thermoelectric generation using magnetic materials is essential to develop active thermal engineering technologies, for which the improvements of not only the thermoelec…

cond-mat.str-el2021★ 28 cited

Observation of Nonlinear Spin-Charge Conversion in the Thin Film of Nominally Centrosymmetric Dirac Semimetal SrIrO3 at Room Temperature

Y. Kozuka, S. Isogami, K. Masuda +5

Spin-charge conversion via spin-orbit interaction is one of the core concepts in the current spintronics research. The efficiency of the interconversion between charge and spin cur…

cond-mat.mtrl-sci2021★ 19 cited

Deterministic influence of substrate-induced oxygen vacancy diffusion on thin film growth

Saikat Das, Tadakatsu Ohkubo, Shinya Kasai +1

In oxide epitaxy, the growth temperature and background oxygen partial pressure are considered as the most critical factors that control the phase stability of an oxide thin film.…

cond-mat.mtrl-sci2020★ 54 cited

Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions

Thomas Scheike, Qingyi Xiang, Zhenchao Wen +4

Giant tunnel magnetoresistance (TMR) ratios of 417% at room temperature (RT) and 914% at 3 K were demonstrated in epitaxial Fe/MgO/Fe(001) exchanged-biased spin-valve magnetic tunn…