collaborators

5 papers

cs.AR2026

Heterogeneous Memory Design Exploration for AI Accelerators with a Gain Cell Memory Compiler

Xinxin Wang, Lixian Yan, Shuhan Liu +10

As memory increasingly dominates system cost and energy, heterogeneous on-chip memory systems that combine technologies with complementary characteristics are becoming essential. G…

cond-mat.mtrl-sci2025

Gate Dielectric Engineering with an Ultrathin Silicon-oxide Interfacial Dipole Layer for Low-Leakage Oxide-Semiconductor Memories

Fabia F. Athena, Jonathan Hartanto, Matthias Passlack +11

We demonstrate a gate dielectric engineering approach leveraging an ultrathin, atomic layer deposited (ALD) silicon oxide interfacial layer (SiL) between the amorphous oxide semico…

cs.AR2025

The Future of Memory: Limits and Opportunities

Samuel Dayo, Shuhan Liu, Peijing Li +5

Memory latency, bandwidth, capacity, and energy increasingly limit performance. In this paper, we reconsider proposed system architectures that consist of huge (many-terabyte to pe…

cs.AR2025

GainSight: A Unified Framework for Data Lifetime Profiling and Heterogeneous Memory Composition

Peijing Li, Matthew Hung, Yiming Tan +8

As AI workloads drive increasing memory requirements, domain-specific accelerators need higher-density on-chip memory beyond what current SRAM scaling trends can provide. Simultane…

cs.AR2025

OpenGCRAM: An Open-Source Gain Cell Compiler Enabling Design-Space Exploration for AI Workloads

Xinxin Wang, Lixian Yan, Shuhan Liu +10

Gain Cell memory (GCRAM) offers higher density and lower power than SRAM, making it a promising candidate for on-chip memory in domain-specific accelerators. To support workloads w…