5 papers
Imaging topological polar structures in marginally twisted 2D semiconductors
Thi-Hai-Yen Vu, Daniel Bennett, Gayani Nadeera Pallewella +16
Moire superlattices formed in van der Waals heterostructures due to twisting, lattice mismatch and strain present an opportunity for creating novel metamaterials with unique proper…
Efficient and Robust p-type Transistor based on Ultra-wide-bandgap Semiconductor
Kaijian Xing, Zherui Yang, Weiyao Zhao +17
The p-type transistor is an indispensable component of semiconductor technology, enabling complementary operation with n-channel transistors for computation, storage, and communica…
Contact resistance and interfacial engineering: Advances in high-performance 2D-TMD based devices
Xiongfang Liu, Kaijian Xing, Chi Sin Tang +7
The development of advanced electronic devices is contingent upon sustainable material development and pioneering research breakthroughs. Traditional semiconductor-based electronic…
Valley optoelectronics based on meta-waveguide photodetectors
Chi Li, Kaijian Xing, Wenhao Zhai +10
In transition metal dichalcogenides, the valley degree of freedom directly couples valley-polarised excitons - excited by circularly polarised light - to valley-dependent chiral ph…
Efficient light upconversion via resonant exciton-exciton annihilation of dark excitons in few-layer transition metal dichalcogenides
Yi-Hsun Chen, Ping-Yuan Lo, Kyle W. Boschen +15
In this work, we report a pronounced light upconversion in few-layer transition metal dichalcogenides. Our joint theory-experiment study attributes the upconversion photoluminescen…