5 papers
Imaging topological polar structures in marginally twisted 2D semiconductors
Thi-Hai-Yen Vu, Daniel Bennett, Gayani Nadeera Pallewella +16
Moire superlattices formed in van der Waals heterostructures due to twisting, lattice mismatch and strain present an opportunity for creating novel metamaterials with unique proper…
Efficient and Robust p-type Transistor based on Ultra-wide-bandgap Semiconductor
Kaijian Xing, Zherui Yang, Weiyao Zhao +17
The p-type transistor is an indispensable component of semiconductor technology, enabling complementary operation with n-channel transistors for computation, storage, and communica…
Disorder-induced symmetry breaking in moiré bands of marginally twisted bilayer MoS
Pablo Reséndiz-Vázquez, Christophe de Beule, Thi-Hai-Yen Vu +8
Twisted transition-metal dichalcogenides host highly tunable moiré potentials, flat bands, and correlated electronic phases, yet the role of disorder in shaping these emergent pro…
Contact resistance and interfacial engineering: Advances in high-performance 2D-TMD based devices
Xiongfang Liu, Kaijian Xing, Chi Sin Tang +7
The development of advanced electronic devices is contingent upon sustainable material development and pioneering research breakthroughs. Traditional semiconductor-based electronic…
Valley optoelectronics based on meta-waveguide photodetectors
Chi Li, Kaijian Xing, Wenhao Zhai +10
In transition metal dichalcogenides, the valley degree of freedom directly couples valley-polarised excitons - excited by circularly polarised light - to valley-dependent chiral ph…