most citedExcitation intensity dependence of photoluminescence spectra of SiGe quantum dots grown on prepatterned Si substrates: Evidence for biexcitonic transition

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cond-mat.mes-hall2012★ 17 cited

Excitation intensity dependence of photoluminescence spectra of SiGe quantum dots grown on prepatterned Si substrates: Evidence for biexcitonic transition

P. Klenovský, M. Brehm, V. Křápek +7

The pumping intensity (I) dependence of the photoluminescence (PL) spectra of perfectly laterally two-dimensionally ordered SiGe quantum dots on Si(001) substrates was studied. The…