activity
20122026
most citedPerpendicular Magnetic Anisotropy in Conducting NiCo2O4 Films from Spin-Lattice Coupling

70 citations · 202 across the 14 of their papers we have counts for

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Showing cond-mat.mtrl-sciShow all

20 papers · 1 filter

cond-mat.mtrl-sci2026

Temperature-doping phase diagram and endurance in Ce-doped HfO2

Amit Kumar Shah, Haidong Lu, Kawshan Hathurusingha +2

The structural and ferroelectric properties of epitaxial Hf1-xCexO2 (CHO) thin films in the ultrathin regime are investigated as a function of Ce concentration (5% <= x <= 20%) and…

cond-mat.mtrl-sci2026

Multiferroicity in the two-dimensional limit in hexagonal LuFeO3 films

Huilin Lai, Junyu Tan, Jinfeng Zhai +15

Multiferroic oxides, which combine coupled ferroelectric and magnetic orders, are central to understanding correlated quantum phenomena. Yet, as thickness approaches the two-dimens…

cond-mat.mtrl-sci2026

Proton-Transfer Ferroelectrics with Exceptional Switching Endurance

Bibek Tiwari, Yuanyuan Ni, Xiaoshan Xu

Reliable organic ferroelectrics for memory applications require extreme endurance under repeated electrical switching. Here we demonstrate exceptional fatigue resistance in highly…

cond-mat.mtrl-sci2026

Twist-induced Out-of-plane Ferroelectricity in Bilayer Hafnia

Jian Huang, Gwan Yeong Jung, Pravan Omprakash +6

Ferroelectric HfO2 is a promising candidate for next-generation memory devices due to its CMOS compatibility and ability to retain polarization at nanometer scales. However, the po…

cond-mat.mtrl-sci2025

Persistent Interfacial Topological Hall Effect Demonstrating Electrical Readout of Topological Spin Structures in Insulators

Jing Li, Huilin Lai, Andrew H. Comstock +12

Conventional topological Hall effects (THE) require conducting magnets, leaving insulating systems largely inaccessible. Here we introduce the interfacial topological Hall effect (…

cond-mat.mtrl-sci2025

Strong tunability of epitaxial relationship and reconstruction at improper ferroelectric interface

Xin Li, Yu Yun, Guodong Ren +4

The atomic structures at epitaxial film-substrate interfaces determine scalability of thin films and can result in new phenomena. However, it is challenging to control the interfac…