31 citations · 94 across the 7 of their papers we have counts for
7 papers
Multi-valuedness of the Luttinger-Ward functional in the Fermionic and Bosonic System with Replicas
Aaram J. Kim, Vincent Sacksteder
We study the properties of the Luttinger-Ward functional (LWF) in a simplified Hubbard-type model without time or spatial dimensions, but with identical replicas located on a s…
Many-body renormalisation of forces in f-electron materials
Evgeny Plekhanov, Phil Hasnip, Vincent Sacksteder +4
We present the implementation of Dynamical Mean-Field Theory (DMFT) in the CASTEP \emph{ab-initio} code. We explain in detail the theoretical framework for DFT+DMFT and we demonstr…
Magnetoresistance when Spin Effects on Conduction are Weak
Vincent Sacksteder
This paper considers certain materials, including topological insulators, where spin rotation symmetry is broken much more strongly than time reversal symmetry. When these material…
Spin Response to Localized Pumps: Exciton Polaritons Versus Electrons and Holes
Vincent Sacksteder, A. A. Pervishko, I. A. Shelykh
Polariton polarization can be described in terms of a pseudospin which can be oriented along the or axis, similarly to electron and hole spin. Unlike electrons and hol…
Modification and Control of Topological Insulator Surface States Using Surface Disorder
Vincent Sacksteder, Tomi Ohtsuki, Koji Kobayashi
We numerically demonstrate a practical means of systematically controlling topological transport on the surface of a three dimensional topological insulator, by introducing strong…
Bulk effects on topological conduction on the surface of 3-D topological insulators
Quansheng Wu, Vincent E. Sacksteder
The surface states of a topological insulator in a fine-tuned magnetic field are ideal candidates for realizing a topological metal which is protected against disorder. Its signatu…
Disorder induced field effect transistor in bilayer and trilayer graphene
Dongwei Xu, Haiwen Liu, Vincent Sacksteder +4
We propose use of disorder to produce a field effect transistor (FET) in biased bilayer and trilayer graphene. Modulation of the bias voltage can produce large variations in the co…