S. Misra

collaborators

4 papers

cond-mat.mtrl-sci2026

First principles band structure of interacting phosphorus and boron/aluminum $I^´$ -doped layers in silicon

Quinn T. Campbell, Andrew D. Baczewski, Shashank Misra +1

Silicon can be heavily doped with phosphorus in a single atomic layer (a $I^´$ layer), significantly altering the electronic structure of the conduction bands within the material. R…

cond-mat.mtrl-sci2025

First-principles dissociation pathways of BCl $_{3}$ on the Si(100)-2 $\times$ 1 surface

Quinn T. Campbell, Shashank Misra, Jeffrey A. Ivie

One of the most promising acceptor precursors for atomic-precision $I^´$ -doping of silicon is BCl $_{3}$ . The chemical pathway, and the resulting kinetics, through which BCl $_{3}$ adsorb…

quant-ph2025

Roadmap on Atomic-scale Semiconductor Devices

Steven R. Schofield, Andrew J. Fisher, Eran Ginossar +47

Spin states in semiconductors provide exceptionally stable and noise-resistant environments for qubits, positioning them as optimal candidates for reliable quantum computing techno…

cond-mat.mtrl-sci2025

A reduced-temperature process for preparing atomically clean Si(100) and SiGe(100) surfaces with vapor HF

Luis FabiÃ¡n PeÃ±a, Evan M. Anderson, John P. Mudrick +4

Silicon processing techniques such as atomic precision advanced manufacturing (APAM) and epitaxial growth require surface preparations that activate oxide desorption (typically >10…

First principles band structure of interacting phosphorus and boron/aluminum I^´-doped layers in silicon

First-principles dissociation pathways of BCl3​ on the Si(100)-2×1 surface

Roadmap on Atomic-scale Semiconductor Devices

A reduced-temperature process for preparing atomically clean Si(100) and SiGe(100) surfaces with vapor HF

First principles band structure of interacting phosphorus and boron/aluminum $I^´$ -doped layers in silicon

First-principles dissociation pathways of BCl $_{3}$ on the Si(100)-2 $\times$ 1 surface