14 citations · 20 across the 5 of their papers we have counts for
5 papers
Impact of Spatial Separation of Type-II GaSb Quantum Dots from the Depletion Region on the Conversion Efficiency Limit of GaAs Solar Cells
A. Kechiantz, A. Afanasev, J. -L. Lazzari
The purpose of this work is to look for a practical structure for application of quantum dots (QD) in solar cells in order to enhance sub-band gap photon absorption. We focuse on a…
Tuning up the performance of GaAs-based solar cells by inelastic scattering on quantum dots and doping of AlyGa1-ySb type-II dots and AlxGa1-xAs spacers between dots
A. Kechiantz, A. Afanasev
We used AlGaSb/AlGaAs material system for a theoretical study of photovoltaic performance of the proposed GaAs-based solar cell in which the type-II quantum dot (QDs) absorber is s…
Modification of band alignment at interface of AlyGa1-ySb/AlxGa1-xAs type-II quantum dots by concentrated sunlight in intermediate band solar cells with separated absorption and depletion regions
A. Kechiantz, A. Afanasev, J. -L. Lazzari
We propose a new intermediate band GaAs solar cell comprising an AlxGa1-xAs absorber with built-in GaSb type-II quantum dots (QDs) [a gradual AlxGa1-xAs absorber with built-in AlyG…
Efficiency Limit Of AlxGa1-xAs Solar Cell Modified By AlyGa1-ySb Quantum Dot Intermediate Band Embedded Outside Of The Depletion Region
A. Kechiantz, A. Afanasev, J. -L. Lazzari +3
Recombination through quantum dots (QDs) is a major factor that limits efficiency of QD intermediate-band (IB) solar cells. Our proposal for a new IB solar cell based on type-II Ga…
Efficiency Limit of Intermediate Band AlxGa1-xAs Solar Cell Based on AlyGa1-ySb Type-II Quantum Dots Embedded Outside of the Depletion Region
A. Kechiantz, A. Afanasev, J. -L. Lazzari
The intermediate band (IB) cell is a concept of highly efficient solar cells proposed by Luque and Marti in 1997. The IB concept uses nonlinear effect of two photon absorption enfo…