7 papers
In-situ Radiation Damage Study of Silicon Carbide Detectors Subjected to Clinical Proton Beams
Daniel Radmanovac, Andreas Gsponer, Simon Waid +5
Silicon carbide (SiC) planar PiN diodes from two different manufacturers were irradiated with 252.7 MeV protons from a medical synchrotron. Over the course of two 8h irradiation sh…
TCAD Parameters for 4H-SiC: A Review
Jürgen Burin, Philipp Gaggl, Simon Waid +2
In this literature review we investigate the permittivity, density-of-state mass, band gap, impact ionization, charge carrier recombination, incomplete ionization and mobility in 4…
Design and simulation of a 4H-SiC low gain avalanche diode with trench-isolation
Sebastian Onder, Philipp Gaggl, Jürgen Burin +6
We present the design and simulation of a 30 thick 4H-SiC Low Gain Avalanche Diode (LGAD) optimized for high-voltage operation. A 2.4 thick epitaxiall…
Extraction of Electron and Hole Drift Velocities in thin 4H-SiC PIN Detectors using High-Frequency Readout Electronics
Andreas Gsponer, Sebastian Onder, Stefan Gundacker +5
Silicon carbide (SiC) has been widely adopted in the semiconductor industry, particularly in power electronics, because of its high temperature stability, high breakdown field, and…
From Single Particles to Clinical Beam Rates: A Wide Dynamic Range Beam Monitor
Simon Waid, Philipp Gaggl, Andreas Gsponer +4
Access to high-energy particle beams is key for testing high-energy physics (HEP) instruments. Accelerators for cancer treatment can serve as such a testing ground. However, HEP in…
Observation of Charge Enhancement in forward-biased neutron-irradiated 4H-SiC PiN Detectors in UV-TCT Measurements
Andreas Gsponer, Philipp Gaggl, Jürgen Burin +2
Due to the increased commercial availability, wide-bandgap semiconductors and their radiation hardness have recently received increased interest from the particle physics community…