31 citations · 47 across the 3 of their papers we have counts for
3 papers
cond-mat.mtrl-sci2005★ 6 cited
Large-scale electronic-structure theory and nanoscale defects formed in cleavage process of silicon
T. Hoshi, R. Takayama, Y. Iguchi +1
Several methods are constructed for large-scale electronic structure calculations. Test calculations are carried out with up to 10^7 atoms. As an application, cleavage process of s…
cond-mat.mtrl-sci2004★ 31 cited
Nanoscale structures formed in silicon cleavage studied with large-scale electronic structure alculations; surface reconstruction, step and bending
Takeo Hoshi, Yusuke Iguchi, Takeo Fujiwara
The 10-nm-scale structure in silicon cleavage is studied by the quantum mechanical calculations for large-scale electronic structure. The cleavage process on the order of 10 ps sho…
cond-mat.mtrl-sci2004★ 10 cited
The electronic structure around As antisite near (110) surface of GaAs
Yusuke Iguchi, Takeo Fujiwara, Akira Hida +1
The electronic structure around a single As antisite in GaAs is investigated in bulk and near the surface both in the stable and the metastable atomic configurations. The most char…