119 citations · 436 across the 9 of their papers we have counts for
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Correlation between In content and emission wavelength of InGaN/GaN nanowire heterostructures
Martin Wölz, Jonas Lähnemann, Oliver Brandt +7
GaN nanowire ensembles with axial InGaN multi-quantum wells (MQWs) were grown by molecular beam epitaxy. In a series of samples, we varied the In content in the MQWs from almost ze…
Macro- and micro-strain in GaN nanowires on Si(111)
Bernd Jenichen, Oliver Brandt, Carsten Pfueller +3
We analyze the strain state of GaN nanowire ensembles by x-ray diffraction. The nanowires are grown by molecular beam epitaxy on a Si(111) substrate in a self-organized manner. On…
Direct experimental determination of the spontaneous polarization of GaN
Jonas Lähnemann, Oliver Brandt, Uwe Jahn +8
We present a universal approach for determining the spontaneous polarization Psp of a wurtzite semiconductor from the emission energies of excitons bound to the different types of…