T. Ohno

activity

20102020

most citedElucidation of the atomic-scale mechanism of the anisotropic oxidation rate of 4H-SiC between the (

0001

) Si-face and (

0001

) C-face by using a new Si-O-C interatomic potential

29 citations · 76 across the 9 of their papers we have counts for

collaborators

Showing 2018Show all

2 papers · 1 filter

cond-mat.mtrl-sci2018★ 29 cited

Elucidation of the atomic-scale mechanism of the anisotropic oxidation rate of 4H-SiC between the ( $0001$ ) Si-face and ( $0001$ ) C-face by using a new Si-O-C interatomic potential

So Takamoto, Takahiro Yamasaki, Takahisa Ohno +3

Silicon carbide (SiC) is an attractive semiconductor material for applications in power electronic devices. However, fabrication of a high-quality SiC/SiO $_{2}$ interface has been…

cond-mat.mtrl-sci2018★ 22 cited

Atomistic mechanism of graphene growth on SiC substrate: Large-scale molecular dynamics simulation based on a new charge-transfer bond-order type potential

So Takamoto, Takahiro Yamasaki, Jun Nara +4

Thermal decomposition of silicon carbide is a promising approach for the fabrication of graphene. However, the atomistic growth mechanism of graphene remains unclear. This paper de…

Elucidation of the atomic-scale mechanism of the anisotropic oxidation rate of 4H-SiC between the (0001) Si-face and (0001) C-face by using a new Si-O-C interatomic potential

Atomistic mechanism of graphene growth on SiC substrate: Large-scale molecular dynamics simulation based on a new charge-transfer bond-order type potential

Elucidation of the atomic-scale mechanism of the anisotropic oxidation rate of 4H-SiC between the ( $0001$ ) Si-face and ( $0001$ ) C-face by using a new Si-O-C interatomic potential